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1、A method for theassessment of oxide charge density and centroid in metal‐oxide‐semiconductor structures afteruniform gate stress
Kies, R. Egilsson, T.Ghibaudo, G.Pananakakis, G. Laboratoire de Physique des Composants à Semiconducteurs, URA CNRS, ENSERG, BP257, 38016 Grenoble, France This paper appearsin: AppliedPhysics Letters Issue Date: Jun 1996 Volume: 68 Issue: 26 On page(s): 3790 - 3792 ISSN: 0003-6951 Digital Object Identifier: 10.1063/1.116618 Date of Current Version: 18 六月 2009 http://ieeexplore.ieee.org/Xplore/defdeny.jsp?url=http%3A%2F%2Fieeexplore.ieee.org%2Fstamp%2Fstamp.jsp%3Ftp%3D%26arnumber%3D4888464&denyReason=-133&arnumber=4888464&productsMatched=null&userType=inst 2、Measurements of spatial charge centroid location in a nonmetalizedpolymer film Xie, Xishun Huang, XiaoqinWu, Zonghan Department of Physics, Southeast University, Nanjing 210018, People’s Republicof China This paper appearsin: Journalof Applied Physics Issue Date: Jul 1992 Volume: 72 Issue: 1 On page(s): 306 - 307 ISSN: 0021-8979 Digital Object Identifier: 10.1063/1.352360 Date of Current Version: 07 七月 2009 http://ieeexplore.ieee.org/Xplore/defdeny.jsp?url=http%3A%2F%2Fieeexplore.ieee.org%2Fstamp%2Fstamp.jsp%3Ftp%3D%26arnumber%3D5143423&denyReason=-133&arnumber=5143423&productsMatched=null&userType=inst |
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