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1、A method for theassessment of oxide charge density and centroid in metal‐oxide‐semiconductor structures afteruniform gate stress
Kies, R. Egilsson, T.  Ghibaudo, G.  Pananakakis, G.  
Laboratoire de Physique des Composants à Semiconducteurs, URA CNRS, ENSERG, BP257, 38016 Grenoble, France
This paper appearsin: AppliedPhysics Letters
Issue Date: Jun 1996
Volume: 68 Issue: 26
On page(s): 3790 - 3792
ISSN: 0003-6951
Digital Object Identifier: 10.1063/1.116618
Date of Current Version: 18 六月 2009
http://ieeexplore.ieee.org/Xplore/defdeny.jsp?url=http%3A%2F%2Fieeexplore.ieee.org%2Fstamp%2Fstamp.jsp%3Ftp%3D%26arnumber%3D4888464&denyReason=-133&arnumber=4888464&productsMatched=null&userType=inst

2、Measurements of spatial charge centroid location in a nonmetalizedpolymer film
Xie, Xishun Huang, Xiaoqin  Wu, Zonghan  
Department of Physics, Southeast University, Nanjing 210018, People’s Republicof China
This paper appearsin: Journalof Applied Physics
Issue Date: Jul 1992
Volume: 72 Issue: 1
On page(s): 306 - 307
ISSN: 0021-8979
Digital Object Identifier: 10.1063/1.352360
Date of Current Version: 07 七月 2009
http://ieeexplore.ieee.org/Xplore/defdeny.jsp?url=http%3A%2F%2Fieeexplore.ieee.org%2Fstamp%2Fstamp.jsp%3Ftp%3D%26arnumber%3D5143423&denyReason=-133&arnumber=5143423&productsMatched=null&userType=inst

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关键词：求助文献 Measurements Measurement MEASUREMEN Department 求助 文献

A method for theassessment of oxide charge density and centroid in metal‐oxide‐semiconductor structures afteruniform gate stress

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