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摘要翻译：
实际金属电极的有限屏蔽长度，尽管很小(<1A),却导致有限的去极化场，从而使薄膜分裂成畴。在非常薄的铁电薄膜中，畴结构简化为极化正弦分布，最早是在20世纪80年代考虑的。我们讨论了这种结构与单畴态之间的相变，并证明了它是一级的，如果它存在的话。另一种可能性是，在零偏压下的单畴态对于大多数系统中的所有温度都是亚稳态的。该方案定义了一个解决问题的路径，该问题是寻找能够在期望的时间周期内维持铁电存储器的系统的参数。
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英文标题：
《Path to finding the critical thickness for memory in thin ferroelectric
films》
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作者：
A. M. Bratkovsky, A. P. Levanyuk
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最新提交年份：
2008
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分类信息：
一级分类：Physics 物理学
二级分类：Materials Science 材料科学
分类描述：Techniques, synthesis, characterization, structure. Structural phase transitions, mechanical properties, phonons. Defects, adsorbates, interfaces
技术，合成，表征，结构。结构相变，力学性质，声子。缺陷，吸附质，界面
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一级分类：Physics 物理学
二级分类：Statistical Mechanics 统计力学
分类描述：Phase transitions, thermodynamics, field theory, non-equilibrium phenomena, renormalization group and scaling, integrable models, turbulence
相变，热力学，场论，非平衡现象，重整化群和标度，可积模型，湍流
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英文摘要：
The finite screening length by real metallic electrodes, albeit very small (<1A), results in finite depolarizing field that tends to split the film into domains. In very thin ferroelectric films the domain structure reduces to sinusoidal distribution of polarization considered first in the 1980s. We discuss the phase transition between this structure and a single domain state and show that it is first order, if it exists at all. The alternative possibility is that the single domain state at zero bias voltage would be metastable for all temperatures in most systems. This scenario defines a path towards solution to a problem of finding parameters of a system that can sustain the ferroelectric memory over a desired period of time.
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PDF链接：
https://arxiv.org/pdf/708.3273
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