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摘要翻译：
我们描述了一种机制，它将带电缺陷引起的长程电位涨落与广泛称为1/f噪声的低频电阻噪声联系起来。该机制适用于包括绝对噪声强度在内的噪声谱的第一性原理微观计算。我们对氢化非晶硅（a-Si：H）薄膜在电流垂直于薄膜平面流动的情况下进行了计算，发现理论噪声强度与实测噪声强度有很好的一致性。所描述的机制是相当一般的。它应该存在于含有屏蔽不良的带电缺陷的一大类系统中。
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英文标题：
《Long-range fluctuations of random potential landscape as a mechanism of
1/f noise in hydrogenated amorphous silicon》
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作者：
B. V. Fine, J. P. R. Bakker and J. I. Dijkhuis
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最新提交年份：
2007
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分类信息：
一级分类：Physics 物理学
二级分类：Statistical Mechanics 统计力学
分类描述：Phase transitions, thermodynamics, field theory, non-equilibrium phenomena, renormalization group and scaling, integrable models, turbulence
相变，热力学，场论，非平衡现象，重整化群和标度，可积模型，湍流
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一级分类：Physics 物理学
二级分类：Disordered Systems and Neural Networks 无序系统与神经网络
分类描述：Glasses and spin glasses; properties of random, aperiodic and quasiperiodic systems; transport in disordered media; localization; phenomena mediated by defects and disorder; neural networks
眼镜和旋转眼镜；随机、非周期和准周期系统的性质；无序介质中的传输；本地化；由缺陷和无序介导的现象；神经网络
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一级分类：Physics 物理学
二级分类：Materials Science 材料科学
分类描述：Techniques, synthesis, characterization, structure. Structural phase transitions, mechanical properties, phonons. Defects, adsorbates, interfaces
技术，合成，表征，结构。结构相变，力学性质，声子。缺陷，吸附质，界面
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英文摘要：
We describe a mechanism, which links the long-range potential fluctuations induced by charged defects to the low frequency resistance noise widely known as 1/f noise. This mechanism is amenable to the first principles microscopic calculation of the noise spectrum, which includes the absolute noise intensity. We have performed such a calculation for the thin films of hydrogenated amorphous silicon (a-Si:H) under the condition that current flows perpendicular to the plane of the films, and found a very good agreement between the theoretical noise intensity and the measured one. The mechanism described is quite general. It should be present in a broad class of systems containing poorly screened charged defects.
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PDF链接：
https://arxiv.org/pdf/707.4156
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